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1-Cell Li-ion Battery Protection ICs

REDC's 1-cell Li-ion/polymer battery protection ICs are high accuracy devices. RSENS type products have a highly accurate detection of ±3 mV in low voltage while having an extremely low voltage range of the excess discharge current detection. Due to using external sensing resistance solution, RSENS type candetect more precise excess charge/discharge current than conventional solution of using FET's on resistance. FET's on resistance is unstable depending on the condition such as gate voltage, temperature, and FET part number. Besides, the R5471 Series (FET sensing type) or the R5441 Series (RSENS type) have high accuracy overcharge voltage detector with ±10 mV accuracy in the temperature range from 0°C to 50°C.

Product
Name
Overcharge
Detector
Threshold [V]
(Accuracy)
Overdischarge
Detector
Threshold [V]
(Accuracy)
Excess Discharge Current
Detector Threshold [V]
(Accuracy)
Excess Charge
Current Detector
Threshold [V]
(Accuracy)
Over-current Detector Type Supply Current
[µA]
Package Download
NEW
R5610
4.470 to 4.535
(±20mV)
2.1 to 3.0
(±55mV)
0.015 to 0.025
(±3mV)
-0.045 to -0.026
(±3mV)
R 3.0 DFN1816-6 Datasheet
NEW
R5611
4.430 to 4.495
(±20mV)
2.1 to 3.0
(±55mV)
0.015 to 0.025
(±3mV)
-0.024 to -0.017
(±3mV)
R 3.0 DFN1616-8 Datasheet
R5441 4.2 to 4.6
(±10mV)
2.0 to 3.4
(±2.0%)
0.015 to 0.150
(±3mV, ±10% or ±5mV)
-0.150 to -0.015
(±4mV, ±20% or ±8mV)
R 3.5 WLCSP-8-P2 Datasheet
R5443 4.2 to 4.6
(±10mV)
2.0 to 3.4
(±2.0%)
0.015 to 0.150
(±3mV, ±10% or ±5mV)
-0.150 to -0.015
(±4mV, ±20% or ±8mV)
R 2.5 WLCSP-6-P7 Datasheet
R5480 4.1 to 4.5
(±20mV)
2.1 to 3.0
(±35mV)
0.030 to 0.048
(±15%)
-0.030 to -0.020
(±15%)
R 4.0 DFN(PLP)1414-6 Datasheet
R5486 4.1 to 4.6
(±20mV)
2.1 to 3.0
(±35mV)
0.015 to 0.046
(±8% or ±3.1mV)
-0.060 to -0.015
(±15% or ±3mV)
R 4.0 DFN(PLP)1414-6 Datasheet
0.03 to 0.08
(±8% or ±3.1mV)
R5494 4.1 to 4.5
(±20mV)
2.1 to 3.0
(±35mV)
0.030 to 0.048
(±10% or ±4mV)
-0.030 to -0.020
(±15%)
R 3.0 DFN1814-6C -
R5405 4.0 to 4.5
(±25mV)
2.0 to 3.0
(±2.5%)
0.05 to 0.20
(±15mV)
-0.20 to -0.05
(±30mV)
FET 4.0 SOT-23-6
DFN(PLP)1616-6
DFN1814-6
Flyer
R5471 4.1 to 4.5
(±10mV)
2.0 to 3.0
(±2.5%)
0.05 to 0.13
(±10mV)
-0.17 to -0.05
(±20mV)
FET 4.0 DFN1814-6 -
R5478 4.2 to 4.5,
3.65 or 3.9
(±25mV)
1.9 to 3.0
(±2.5%)
0.05 to 0.20
(±15mV)
- FET 3.0 SOT-23-6 Datasheet
R5487
R5497
4.2 to 4.6
(±20mV)
2.0 to 3.0
(±35mV)
0.025 to 0.15
(±5mV or ±10mV)
-0.15 to -0.02
(±10% or ±5mV)
FET 3.0 DFN1814-6B
DFN1414-6B
Datasheet
R5492  4.0 to 4.5
(±20mV)
2.0 to 3.0
(±2.5%)
0.05 to 0.20
(±15mV)
-0.20 to -0.05
(±15mV)
FET 4.0 SOT-23-6 Datasheet
R5499 4.3 to 4.6
(±12mV)
2.0 to 3.0
(±2.5%)
0.03 to 0.08
(±5mV)
-0.10 to  -0.05
(±15mV)
FET 4.0 WLCSP-6-P4 Datasheet
  • *1Topt=0°C to 50°C, Considering of variation in parameters.
    We compensate for these characteristics related to temperature by laser-trimming, however, this specifications is guaranteed by design.

TYPICAL APPLICATION

TYPICAL APPLICATION

RSENS: Over-current detector input pin

Due to using external resistance R3, RSENS type can detect more precise excess charge/discharge current than conventional solution of using FET's on-resistance. FET's on-resistance is unstable depending on the condition such as gate voltage, temperature, and FET part number.

Excess current threshold of R5610/ R5611 are ±3 mV accuracy. (Detection voltage = 10 mV)

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